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Metal-halide perovskite solar cells (PSCs) have become a promising candidate for photovoltaic applications. Current popular organic hole conductors for highly efficient PSCs bring cost and stability issues, which hinder the commercialization of the PSCs. Hole-conductor-free PSCs are attracting great interest because they eliminate the adverse effects of organic hole conductors by transporting holes in the perovskite itself. In this article, we summarize recent progress in conventional, inverted, and printable mesoscopic hole-conductor-free PSCs. Specifically, we emphasize the stunning stability and scale-up manufacturing of printable hole-conductor-free PSCs, discussing their potential from laboratory to market. The causes for hole-conductor-free PSCs’ current low efficiency are also discussed, and are primarily ascribed to energy-level alignment and interface recombination. We believe that the efficiencies of hole-conductor-free PSCs can be enhanced to be comparable with hole-conductor-containing PSCs by interface modification and material design.
Metal-halide perovskites, in particular their nanocrystal forms, have emerged as a new generation of light-emitting materials with exceptional optical properties, including narrow emissions covering the whole visible region with high photoluminescence quantum efficiencies of up to near-unity. Remarkable progress has been achieved over the last few years in the areas of materials development and device integration. A variety of synthetic approaches have been established to precisely control the compositions and microstructures of metal-halide perovskite nanocrystals (NCs) with tunable bandgaps and emission colors. The use of metal-halide perovskite NCs as active materials for optoelectronic devices has been extensively explored. Here, we provide a brief overview of recent advances in the development and application of metal-halide perovskite NCs. From color tuning via ion exchange and manipulation of quantum size effects, to stability enhancement via surface passivation, new chemistry for materials development is discussed. In addition, processes in optoelectronic devices based on metal-halide perovskite NCs, in particular, light-emitting diodes and radiation detectors, will be introduced. Opportunities for future research in metal-halide perovskite NCs are provided as well.
Hydrogen, the simplest of all molecules, made of the simplest of all atoms, is a material that has successfully accomplished many historic missions: it has powered the engines of space rockets and has served in the ammonia-based fertilizer revolution, the iron and steel sector, and electronics manufacturing. But the task of putting hydrogen in the center of the global energy scene has proven tantalizing, perpetually coming closer to materialization, but repeatedly being pushed to the future. Is it possible that the time has arrived for hydrogen to finally come into its own?
Silicon nanowires (SiNWs) were fabricated in a metal-assisted chemical etching method with two steps including dipping silicon wafers in AgNO3/HF solutions and then in H2O2/HF solutions. Grazing incidence X-ray diffraction measurements with a set of incidence angles were carried out on the resulting samples to detect characteristics of silver nanoparticles in the etched silicon. Compared with the uniform size of silver nanoparticles on the surface, the silver nanoparticles in etched silicon were found with size increasing and content decreasing corresponding to the depths. Based on the silver size increasing phenomenon, a detailed supplementary hypothesis about SiNWs formation was proposed about silver disintegration and redeposition in the later stage of silicon etching. For 2, 3, 4, and 8 mM AgNO3 solutions used to study their effect on the SiNWs, it was found that a higher quantity of Ag+ concentration such as 8 mM were not beneficial for producing good quality SiNWs.
Halide perovskites have attracted tremendous attention from many researchers recently, particularly for their excellent optoelectronic properties in applications such as photovoltaic solar cells and light-emitting diodes. In recent years, the application of halide perovskites has rapidly extended into nanoelectronics, such as thermoelectric, memory, and artificial synapse applications. Halide perovskites can be synthesized easily, even at relatively low temperatures, and organic and inorganic ions can even coexist in one crystal structure. Moreover, the structural flexibility is excellent, where two- and three-dimensional crystals can be linked together. The combination of various types of halide ions not only controls the physical properties of the halide perovskite, but also facilitates control of the bandgap by varying the size of nanoparticles when they exhibit quantum effects. Halide perovskites thus provide an excellent platform for optoelectronics with interesting optical, electrical, and magnetic properties. The articles in this issue introduce the wide range of basic properties and potential applications of halide perovskites.
Perovskite solar cells are poised to be a game changer in photovoltaic technology with a current certified efficiency of 25.2%, already surpassing that for multicrystalline silicon solar cells. On the path to higher efficiencies and much needed higher stability, however, interfacial and bulk defects in the active material should be carefully engineered or passivated. Post-treatment techniques show great potential to address defect issues (e.g., by coarsening the perovskite grains or establishing an interfacial heterogeneous layer). In this article, we summarize current fundamental understanding of the major energy-loss routes in perovskite materials and devices, including bulk/interfacial defects mediated nonradiative recombination and band mismatch-induced recombination. This is followed by a survey of the important post-treatment techniques developed over the past few years to minimize energy loss in perovskite solar cells, including solvent annealing, amine halide solution dripping-induced Ostwald ripening, three-dimensional–two-dimensional interface layer from phenethylammonium iodide (PEAI) dripping, and wide bandgap interface layer engineering from n-hexyl trimethylammonium bromide washing. Finally, we provide a prospective view about further developments of post-treatment techniques.
Although halide perovskites (HaPs) are synthesized in ways that appear antithetical to those required for yielding high-quality semiconductors, the properties of the resulting materials imply, particularly for single crystals, ultralow densities of optoelectronically active defects. This article provides different views of this unusual behavior. We pose the question: Can present models of point defects in solids be used to interpret the experimental data and provide predictive power? The question arises because the measured ultralow densities refer to static defects using our present methods and models, while dynamic defect densities are ultrahigh, a result of the material being relatively soft, with a shallow electrostatic energy landscape, and with anharmonic lattice dynamics. All of these factors make the effects of dynamic defects on the materials’ optoelectronic properties minimal. We hope this article will stimulate discussions on the nontrivial question: Are HaPs, and especially the defects within them, business as usual?