To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure no-reply@cambridge.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
The major factors governing the performance of bipolar transistors in circuit applications are discussed in Chapter 11. Several of the commonly used figures of merit, namely, cutoff frequency, maximum oscillation frequency, and logic gate delay, are examined, and how a bipolar transistor can be optimized for a given figure of merit is discussed. Sections are devoted to examining the important delay components of a logic gate, and how these components can be minimized. The scaling properties of vertical bipolar transistors for high-speed digital logic circuits are discussed. A discussion of the optimization of bipolar transistors for RF and analog circuit applications is given. The chapter concludes with a discussion of the design tradeoff and optimization of symmetric lateral bipolar transistors for RF and analog circuit applications. Finally, several unique opportunities offered by symmetric lateral bipolar transistors, some of them beyond the capability of CMOS, are discussed.
Frank H. Berkshire, Imperial College of Science, Technology and Medicine, London,Simon J. A. Malham, Heriot-Watt University, Edinburgh,J. Trevor Stuart, Imperial College of Science, Technology and Medicine, London
Here, we dive into the details of RCT in order to contrast it with the ideas encapsulated by BPS. What is rational political behavior? We discuss the basic assumptions of the RCT model, especially regarding the cognitive abilities and motivations that people use when making complex decisions about abstract topics such as public policy preferences and voting. BPS diverges from RCT in two critical ways: it is process-oriented, and incorporates known limits on the cognitive abilities of both citizens and elites into models of political behavior, and 2) it explains motivations behind preferences, especially those distinct from material or economic self-interest. We interrogate whether standard RCT assumptions are plausible, such as whether voters can adequately collect and weigh all the information relevant to a political choice in their heads simultaneously, why citizens turn out to vote when their potential to impact the outcome of an election is infinitesimal, or the public’s willingness to support costly anti-terror policies even if the likelihood of a serious attack is vanishingly small.
Chapter 4 covers the fundamentals of MOS capacitors – a prerequisite to MOSFET transistors. Starting with the basic concepts of free electron level and work function, the chapter proceeds to the solution of charge and potential in silicon, followed by a full description of the C–V characteristics. Quantum mechanical effects, important for MOS capacitors of thin oxides, are then discussed. Added in the third edition is a new section on interface states and oxide traps. Lastly, the high field section covers tunneling currents, high-κ gate dielectrics, and gate oxide reliability.
Frank H. Berkshire, Imperial College of Science, Technology and Medicine, London,Simon J. A. Malham, Heriot-Watt University, Edinburgh,J. Trevor Stuart, Imperial College of Science, Technology and Medicine, London
We come to the end of the book with a hopeful summary and discussion about the benefits to the policy community of behavioral political ccience and our synthesis of rational choice and BPS. By linking ideas from diverse social scientific disciplines – economics, political science, sociology, psychology, communication, and others – we hope the book might create benefits larger than the sum of its individual chapters. Moving beyond the simple assumptions of Economic Man, BPS has improved our understanding of how people actually think, decide, and act in the political realm. We also discuss how BPS insights can be incorporated into the formal political models that are the hallmark of RCT approaches to political sciences, paving a path for integration of the work by theorists working in both traditions. The biases carefully reviewed in the first half of the book, combined with insights about what types of preferences, with what origins, influence political decisions leave us much better off than we were even fifty years ago in the field. We hope the reader will agree, and that those who hope to make informed, responsive public policies will use BPS insights as a helpful foundation.
Frank H. Berkshire, Imperial College of Science, Technology and Medicine, London,Simon J. A. Malham, Heriot-Watt University, Edinburgh,J. Trevor Stuart, Imperial College of Science, Technology and Medicine, London
The introductory chapter begins by reviewing the history and evolution of VLSI technology over the past seventy-five years. Recent developments are then summarized, followed by a brief description of the chapters in the book.
An important challenge of compressor design is flow separation. A significant challenge of turbine design is heat transfer from the hot gases to the metal blades. To understand the physics of these two challenges, this chapter will introduce the viscous boundary layer and thermal boundary layer concepts.