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6881 results in Condensed Matter Physics, Nanoscience and Mesoscopic Physics

Page 33 of 345

  • 4 - MOS Capacitors

  • Yuan Taur, University of California, San Diego, Tak H. Ning
  • Book:
    Fundamentals of Modern VLSI Devices
    Published online:
    27 January 2022
    Print publication:
    02 December 2021, pp 99-170

  • Summary

    Chapter 4 covers the fundamentals of MOS capacitors – a prerequisite to MOSFET transistors. Starting with the basic concepts of free electron level and work function, the chapter proceeds to the solution of charge and potential in silicon, followed by a full description of the C–V characteristics. Quantum mechanical effects, important for MOS capacitors of thin oxides, are then discussed. Added in the third edition is a new section on interface states and oxide traps. Lastly, the high field section covers tunneling currents, high-κ gate dielectrics, and gate oxide reliability.

  • 1 - Introduction

  • Yuan Taur, University of California, San Diego, Tak H. Ning
  • Book:
    Fundamentals of Modern VLSI Devices
    Published online:
    27 January 2022
    Print publication:
    02 December 2021, pp 1-8

  • Summary

    The introductory chapter begins by reviewing the history and evolution of VLSI technology over the past seventy-five years. Recent developments are then summarized, followed by a brief description of the chapters in the book.

Page 33 of 345