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Superconductivity is among the most exciting of quantum phenomena in condensed matter physics, and has important applications across science and technology, from fusion reactors to particle accelerators. This self-contained text provides a comprehensive account of the physical foundations of superconductivity and related recent developments in the field. Beginning with a detailed description of the BSC theory of superconductivity, the book then describes the subsequent successes of this landmark theory and proceeds to more advanced topics such as Josephson effects and vortices. The strong coupling theory of superconductivity is introduced in later chapters, providing a springboard to important current research on hydride superconductors, which have displayed very high critical temperatures. Recent manifestations of superfluidity in ultracold atoms physics are also described. This book will give readers a solid grounding in the theory and applications of superconductivity, and an appreciation of its broader importance in the field of modern condensed matter physics.
A comprehensive guide on Atomic-Scale Analytical Tomography (ASAT) that discusses basic concepts and implications of the technique in areas such as material sciences, microscopy, engineering sciences and several interdisciplinary avenues. The title interrogates how to successfully achieve ASAT at the intersection of transmission electron microscopy and atom probe microscopy. This novel concept is capable of identifying individual atoms in large volumes as well as in 3D, with high spatial resolution. Written by leading experts from academia and industry, this book serves as a guide with real-world applications on cutting-edge research problems. An essential reading for researchers, engineers and practitioners interested in nanoscale characterisation, this book introduces the reader to a new direction for atomic-scale microscopy.
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.