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Structural, optical and thermal properties ofβ-SnS2 thin films prepared by the spraypyrolysis

Published online by Cambridge University Press:  15 March 2000

C. Khélia ,
F. Maïz ,
M. Mnari ,
T. Ben Nasrallah ,
M. Amlouk  and
S. Belgacem
C. Khélia
Affiliation:
Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia
F. Maïz
Affiliation:
Équipe de photothermique de Nabeul, Institut Préparatoire aux Études d'Ingénieur de Nabeul, B.P. 62, Merazka 8000 Nabeul, Tunisia
M. Mnari
Affiliation:
Laboratoire de Chimie Analytique, Faculté des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia
T. Ben Nasrallah
Affiliation:
Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia
M. Amlouk
Affiliation:
Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia
S. Belgacem
Affiliation:
Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia
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Abstract

Tin disulfide β-SnS2 thin films have been prepared on pyrex substrates bythe spray pyrolysis technique using tin tetrachloride and thiourea as starting materials. Thedepositions were carried out in the range of substrate temperatures from 240 to400 °C. Highly c-axis oriented β-SnS2 films, having a strong (001) X-raydiffraction line are obtained at temperature 280 °C and using concentration ratioin solution $\Re = [{\rm S}]/[{\rm Sn}] = 2.5$ . Films surfaces were analyzed by contactAtomic Force Microscopy (AFM) and by Scanning Electron Microscopy (SEM) in order tounderstand the effect of the deposited temperature on the surface structure. On the otherhand, from transmission and reflection spectra, the band gap energy determined is about2.71 eV. Finally using the photodeflection spectroscopy technique, the thermal conductivityK c and diffusivity D c were obtained. Their values are 10 Wm−1K−1 and 10−5 m2s−1 respectively.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 9 , Issue 3 , March 2000 , pp. 187 - 193
Copyright
© EDP Sciences, 2000

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References

Julien, C., Eddreif, M., Samaras, I., Balkanski, M., Mater. Sci. Eng. B 15, 70 (1992). CrossRef
Engelken, R.D., McCoud, H.E., Chuan Lee, M. Slayton, H. Ghreishi, J. Electrochem. Soc. 134, 2696 (1987). CrossRef
Golubkov, A.V., Dubrovskii, G.V., Prokof'ev, A.V., Phys. Solid State 36, 1453 (1994).
Nnebesny, K.W., Collins, G.E., Lee, P.A., Chau, L.K., Danziger, J., Osburn, E., Armstrong, N.R., Chem. Mater. 3, 829 (1991). CrossRef
Shibata, T., Miura, T., Kishi, T., Nagai, T., J. Cryst. Growth 106, 593 (1990). CrossRef
Arora, S.K., Patel, D.H., Agarwal, M.K., Cryst. Res. Technol. 28, 623 (1993). CrossRef
Arora, S.K., Patel, D.H., Agarwal, M.K., J. Cryst. Growth 131, 268 (1993). CrossRef
Arora, S.K., Patel, D.H., Agarwal, M.K., J. Mater. Sci. 29, 3979 (1994). CrossRef
Bhira, L., Amlouk, M., Belgacem, S., Bennaceur, R., Barjon, D., Phys. Stat. Sol. A 165, 141 (1998). 3.0.CO;2-H>CrossRef
Belgacem, S., Bennaceur, R., Rev. Phys. Appl. 25, 55 (1990).
E.J. Johnson, Optical Properties of III-V compounds, in Semiconductor and Semimetal, edited by R.K. Willardson, A.C. Beer (Academic Press, New York, 1967), Vol. 3, p. 157.
N. Yacoubi, S. Ben Cheikh, M. Sfar, Rev. Gén. Therm., 393 (1992).
Fernelus, N.C., J. Appl. Phys. 51, 1 (1981).