In this paper we present the results of modeling concerningcurrent-voltage (V < 0) characteristics of metal/ultra-thin oxide/semiconductorstructures, where the oxide thickness varies from 45 Åto 80 Å. We analyzethe theoretical influence of the temperature and Schottky effect, on the Fowler-Nordheim (FN) conduction. The results obtained show that these influencesdepend on the electric field in the oxide and the potential barrier at themetal/oxide interface. At the ambient temperature, the influence on thispotential barrier is lower than 1.5% . However, it can reach 45% on thepre-exponential coefficient (K 1). It is therefore necessary to consider in the FNclassical conduction expression a correction term that takes account of thetemperature and Schottky effects. These results are validated experimentally bymodeling at high field, the current-voltage characteristics of the realizedstructures. At low field, we have determined the excess current [3],which is due to defects localized in the oxide layer, according to the structurearea and the oxide thickness. By modeling this excess current, we show that itis of FN type, and deduct that the effective defect barrier depends little onthe structure area and the oxide thickness. By taking into account the effectivebarrier value and the corrective factors due to the temperature and Schottkyeffect, we determine the defect effective area and show that it is related tothe breakdown field of the structures: when the defect effective area increases, the breakdown field decreases.