Ferroelectric (FE) films, especially PZT films, have received increasingattention for microelectronics applications such as FE memory and in highdensity DRAM's. While rare earth doped PbTiO3 ceramics has beenstudied for SAW and piezoelectric applications, rare earth-doped filmsseldom have been systematically explored. A series of sol-gel derived PbTiO3 films with varying amounts (5-15 mole %) of rare earths(such as, Nd, Sm, Tb, Dy, Er ,Yb and La ) have been prepared using acetatesand alkoxides as precursors. The solutions were spin coated onto platinizedSi wafers. The effects of the type and amount of rare incorporation on thephase assembly and microstructure have been quantified. The results ofdielectric characterization (e.g., dielectric constant, dissipation factorand leakage currents) and FE behaviors (viz remanent polarization, andcoercive field) are presented; these films exhibited low leakage currents(3E-10 A/cm2) and much higher dielectric constant (up to 525)compared to undoped PbTiO3 films.