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Subband structure and band bending in symmetric modulation-doped double quantum wells

Published online by Cambridge University Press:  21 December 2004

F. Ungan ,
E. Ozturk ,
Y. Ergun  and
I. Sokmen
F. Ungan
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
E. Ozturk*
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
Y. Ergun
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
I. Sokmen
Affiliation:
Dokuz Eylul University, Department of Physics, Izmir, Turkey
*
eozturk@cumhuriyet.edu.tr
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Abstract

We have calculated the subband structure and confinement potential of modulation-doped Ga $_{1-x}$ Alx As-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are determined by solving the Schrödinger and Poisson equations self-consistently. To understand the exchange correlation potential effects on the band bending and subband populations, this potential has been included in the calculation at 0 K and, at room temperature. We find that at low doping concentrations the effect of the exchange correlation potential is more pronounced on the subband populations.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 29 , Issue 1 , January 2005 , pp. 27 - 31
Copyright
© EDP Sciences, 2005

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