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Structural characterisation of $(11{\bar 2}0)$ 4H-SiC substrates bycathodoluminescence and X-ray topography

Published online by Cambridge University Press:  15 July 2004

P. Hidalgo ,
L. Ottaviani ,
H. Idrissi ,
M. Lancin ,
S. Martinuzzi  and
B. Pichaud
P. Hidalgo*
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France Dpto. Fisica de Materiales, Fac. Ciencias Fisicas - UCM. Ciudad Universitaria, 28040 Madrid, Spain
L. Ottaviani
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
H. Idrissi
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
M. Lancin
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
S. Martinuzzi
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
B. Pichaud
Affiliation:
Laboratoire TECSEN, UMR 6122, Université de Marseille St Jérome case 231, 13397 Marseille, Cedex 20, France
*
phidalgo@fis.ucm.es
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Abstract

Silicon Carbide (SiC) is a wide band gapsemiconductor, having opto-electronic properties that are suitable formany applications. Some structural defects due to crystal growthand/or doping technologies are commonly present in the substratesof SiC. The $(11\bar{2}0)$-oriented 4H-SiC bulk wafers areparticularly investigated, due to some advantages with respect tothe (0001)-Si face. One of these advantages is a better crystalreordering during post-implantation annealing. In this papercathodoluminescence (CL) and X-Ray topography measurements havebeen carried out in order to investigate the optical andstructural properties of commercial $(11\bar{2}0)$ 4H n+-typesubstrates.

Keywords

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References

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