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Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells

Published online by Cambridge University Press:  23 December 2011

M. Ben Rabha ,
M. Hajji ,
S. Belhadj Mohamed ,
A. Hajjaji ,
M. Gaidi ,
H. Ezzaouia  and
B. Bessais
M. Ben Rabha*
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
M. Hajji
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
S. Belhadj Mohamed
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
A. Hajjaji
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
M. Gaidi
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
H. Ezzaouia
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
B. Bessais
Affiliation:
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
*
a rabha2222@yahoo.fr
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Abstract

In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400–1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.

Information

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 57 , Issue 2 , February 2012 , 21301
Copyright
© EDP Sciences, 2011

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References

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