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Semiconducting properties of Tm doped Yb-ZnO films by spray pyrolysis

Published online by Cambridge University Press:  25 November 2014

Imane Chaki ,
Azzam Belayachi ,
Toufik El Bahraoui ,
Mohamed Regragui  and
Mohamed Abd-Lefdil
Imane Chaki
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
Azzam Belayachi
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
Toufik El Bahraoui
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
Mohamed Regragui
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
Mohamed Abd-Lefdil*
Affiliation:
University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat, Morocco
*
ae-mail: a-lefdil@fsr.ac.ma
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Abstract

In this work, we have investigated the structural, optical and electrical properties of rare earth co-doped zinc oxide thin films prepared by spray pyrolysis technique. X-ray diffraction has shown that the films are polycrystalline and textured with the c-axis of the wurtzite structure along the growth direction. Scanning electronic microscopy and transmission electronic microscopy were used to study the films composition and morphology. Photoluminescence measurements showed that all the films have a strong emission band at around 380 nm. Layers with electrical resistivity values as low as 5.7 × 10−2 Ω cm were obtained.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 68 , Issue 3 , December 2014 , 30301
Copyright
© EDP Sciences, 2014

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