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Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix

Published online by Cambridge University Press:  15 July 2004

J. A. García ,
R. Plugaru ,
B. Méndez ,
J. Piqueras  and
T. J. Tate
J. A. García
Affiliation:
Universidad del País Vasco, Departamento de Física Aplicada II, Lejona, Vizcaya, Spain
R. Plugaru
Affiliation:
Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, 28040 Madrid, Spain
B. Méndez*
Affiliation:
Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, 28040 Madrid, Spain
J. Piqueras
Affiliation:
Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, 28040 Madrid, Spain
T. J. Tate
Affiliation:
Department of Electrical and Electronic Engineering, Imperial College of Science and Technology, London, UK
*
bianchi@fis.ucm.es
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Abstract

The luminescence of amorphous silicon layers eitherimplanted with Er or co-implanted with Er and O has been studiedby photoluminescence (PL) and cathodoluminescence (CL) in thescanning electron microscope. Annealing in nitrogen causes theformation of oxide species and Er-Si complexes or precipitates aswell as spectral changes in the visible and infrared ranges. Themain CL emission takes place in the visible range while PL spectrareveal intense visible and infrared emission. CL spectra showblue-violet, or green, emission bands whose relative intensitiesdepend on the post-implantation annealing temperature. The PLspectra show a blue-violet band with a series of lines in theviolet region related to phonon assisted transitions as well asdifferent emission bands in the range 1200–1500 nm. The influenceof the annealing-induced structural changes on the observedspectra is discussed.

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References

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