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Redistribution of Ni implanted into InP

Published online by Cambridge University Press:  15 February 2001

T. K. Chini ,
S. K. Ghose ,
B. Rout ,
B. N. Dev ,
M. Tanemura  and
F. Okuyama
T. K. Chini*
Affiliation:
Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Calcutta 700064, India
S. K. Ghose
Affiliation:
Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
B. Rout
Affiliation:
Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
B. N. Dev
Affiliation:
Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
M. Tanemura
Affiliation:
Nagoya Institute of Technology, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
F. Okuyama
Affiliation:
Nagoya Institute of Technology, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
*
tapashp@hp2.saha.ernet.in
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Abstract

The redistribution of Ni in InP is studied by annealing samples ofInP implanted with 0.9 MeV Ni at 60o angle of ion incidencewith respect to target surface normal as a function of dose (8.5×1012−4.5×1015 cm−2). Ni profiles are measured by secondaryion mass spectrometry (SIMS) and implantation induced damage by Rutherford backscattering spectrometry in channeling (RBS/C) condition. The highest dose sampleis characterised by remarkable Ni accumulation near the surface (at ∼ $0.3R_{\rm np}$ ) that has not been observed earlier along with two otherdistinct accumulation zones at R np+ $\Delta R_{\rm np}$ and $2.2R_{\rm np}$ after annealing at 650 °C for 30 min. Here, R np is the normalcomponent of the projected range for oblique angle bombardment.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 13 , Issue 2 , February 2001 , pp. 83 - 87
Copyright
© EDP Sciences, 2001

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