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Origin of the photoluminescence shifts in porous silicon*

Published online by Cambridge University Press:  15 February 1998

H. Elhouichet ,
B. Bessaïs ,
O. Ben Younes ,
H. Ezzaouia  and
M. Oueslati
H. Elhouichet
Affiliation:
Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaïque et des Matériaux Semiconducteurs, BP 95, 2050 Hammam-Lif, Tunisie
B. Bessaïs
Affiliation:
Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaïque et des Matériaux Semiconducteurs, BP 95, 2050 Hammam-Lif, Tunisie
O. Ben Younes
Affiliation:
Laboratoire de Spectroscopie Raman, Département de Physique, Faculté des Sciences de Tunis, 1006 Le Belvédère, Tunis, Tunisie
H. Ezzaouia
Affiliation:
Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaïque et des Matériaux Semiconducteurs, BP 95, 2050 Hammam-Lif, Tunisie
M. Oueslati
Affiliation:
Laboratoire de Spectroscopie Raman, Département de Physique, Faculté des Sciences de Tunis, 1006 Le Belvédère, Tunis, Tunisie
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Abstract

The origin of the photoluminescence (PL) shifts in Porous Silicon(PS) is discussed according to a quantum confinement – based model, inwhich we modelize the PS layer as a mixture of quantum dots and wires. Itwas shown that a PL blueshift or redshift may occur during laser irradiationof PS, depending on preparation conditions. No PL shift was observed forsome PS samples, even after a long ageing in air, due to the presence of anamorphous silicon phase detected from Raman spectroscopy measurements. Itwas found that the presence of the amorphous phase plays an important rolein the PL behaviour of oxidised PS.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 1 , Issue 2 , February 1998 , pp. 153 - 157
Copyright
© EDP Sciences, 1998

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References

* This paper was presented at the "Journées Maghrébines sur les Sciences des Matériaux" held at Hammamet the 8, 9 and 10 November 1996.