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Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor

Published online by Cambridge University Press:  15 October 1998

R. Bourguiga ,
H. Sik  and
A. Scavennec
R. Bourguiga
Affiliation:
Faculté des Sciences de Bizerte, 7021 Zarzouna-Bizerte, Tunisia
H. Sik
Affiliation:
France Telecom, Centre National d'Études des Télécommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France
A. Scavennec
Affiliation:
France Telecom, Centre National d'Études des Télécommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera, BP 107, 92225 Bagneux Cedex, France
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Abstract

The dependence of the current gain with the size of the emitter-base junction of double mesa Self Passivated Heterojunction Bipolar Transistors (SP-HBT) has been investigated, the extrinsic base layer being passivated with a n-type GaInP layer. The current gain is widely improved, due to a 18-fold reduction of the surface recombination in the extrinsic base region with respect to unpassivated HBT. The surface recombination current ideality factor has been found to be 1.13.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 4 , Issue 1 , October 1998 , pp. 27 - 29
Copyright
© EDP Sciences, 1998

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