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The interface optical phonon and electron-phonon interaction in GaN/AlN spherical heterostructures

Published online by Cambridge University Press:  19 June 2008

W. D. Huang ,
Y. J. Ren ,
S. Y. Wei  and
J. H. Wang
W. D. Huang*
Affiliation:
Department of Physics, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, P.R. China
Y. J. Ren
Affiliation:
Department of Physics, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, P.R. China
S. Y. Wei
Affiliation:
College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, Henan, P.R. China
J. H. Wang
Affiliation:
Department of Physics, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, P.R. China
*
sxlgwendeng@163.com
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Abstract

Based on the dielectric-continuum model, the expression of polarization eigenvector, the dispersion relations, and the electron-phonon interaction Fröhlich-like Hamiltonian for interface optical (IO) phonons in multilayer GaN/AlN spherical heterostructures are obtained. As an application of the theory, the dispersion relations and electron-phonon coupling function strengths of the IO phonons are calculated for four-layer GaN/AlN/GaN/AlN spherical heterostructures. The results show that the lower frequency phonons have a much greater contribution to the coupling function $\Gamma _l^{IO} (r)$ than higher frequency phonons.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 43 , Issue 1 , July 2008 , pp. 73 - 77
Copyright
© EDP Sciences, 2008

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