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High-performance InP/InGaAs pnp δ-doped heterojunction bipolar transistor

Published online by Cambridge University Press:  14 April 2005

J.-H. Tsai ,
K.-P. Zhu ,
Y.-C. Chu  and
S.-Y. Chiu
J.-H. Tsai*
Affiliation:
Department of Physics, National Kaohsiung Normal University 116, Ho-ping 1st Road, Kaohsiung, Taiwan, Republic of China
K.-P. Zhu
Affiliation:
Department of Physics, National Kaohsiung Normal University 116, Ho-ping 1st Road, Kaohsiung, Taiwan, Republic of China
Y.-C. Chu
Affiliation:
Department of Physics, National Kaohsiung Normal University 116, Ho-ping 1st Road, Kaohsiung, Taiwan, Republic of China
S.-Y. Chiu
Affiliation:
Department of Physics, National Kaohsiung Normal University 116, Ho-ping 1st Road, Kaohsiung, Taiwan, Republic of China
*
jhtsai@nknucc.nknu.edu.tw
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Abstract

A high-performance InP/InGaAs $\delta $ -doped pnp heterojunction bipolar transistor (HBT) has been first fabricated and demonstrated. The addition of a $\delta $ -doped sheet between two undoped spacer layers effectively eliminates the potential spike at emitter-base junction, lowers the emitter-collector offset voltage, and increases the barrier for electrons, simultaneously. Experimentally, a maximum current gain of 50 and a low offset voltage of 70 mV are obtained, respectively. To our knowledge, the offset voltage of the studied device is the lowest value for the reported InP/InGaAs pnp HBTs.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 30 , Issue 3 , June 2005 , pp. 167 - 169
Copyright
© EDP Sciences, 2005

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