Published online by Cambridge University Press: 15 January 2000
We have developed a model for the calculation of the induced current due to an electron beam with anextended generation profile. Added to the absorbed and diffuse electrons in the depth distribution, thegeneration profile takes into account the lateral diffusion. The analytical expression of the electron beam induced current (EBIC) is obtained by solving the continuityequation in permanent regime by the Green function method. The induced current profile, obtained in the case of a ternary component(Ga0.7Al0.3As:N+/Ga0.7Al0.3As:P) sulfur doped and prepared by organometalliccompounds phase vapor epitaxy method, is compared to the theoretical profiles whose analytical expressionsare given by Van Roosbroeck and Bresse. The experimental current profile, measured by S.E.M provided us to calculate the diffusion length of theminority carriers: L p = 1 µm in the N region and L n = 1.80 µm in the Pregion of the ternaire component. The theoretical curve obtained from the proposed model is in goodagreement with the experimental one for a surface recombination velocity of 106 cm s−1. Our resultsare found to be consistent compared to those obtained by other experimental techniques using the samesamples.