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Electron irradiation effect on thermal donors in CZ-Si

Published online by Cambridge University Press:  15 July 2004

K. Takakura ,
H. Ohyama ,
H. Murakawa ,
T. Yoshida ,
J. M. Rafí ,
R. Job ,
A. Ulyashin ,
E. Simoen  and
C. Claeys
K. Takakura*
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
H. Murakawa
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
T. Yoshida
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
J. M. Rafí
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
R. Job
Affiliation:
University of Hagen, Haldener Str. 182, PO Box 940, D-58084 Hagen, Germany
A. Ulyashin
Affiliation:
University of Hagen, Haldener Str. 182, PO Box 940, D-58084 Hagen, Germany
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium E. E. Dept, K. U. Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
*
takakura@ee.knct.ac.jp
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Abstract

Electrical properties of the shallow thermal donors (TDs) in n-type CZ-Si diodes by the electron irradiation were investigated. After the electron irradiation, carrier concentration was decreased. From deep level transient spectroscopy (DLTS) measurements, some peaks related to TDs and vacancy-oxygen complexes were observed for the irradiated samples. The peak related to V-O and/or A-center at EC -0.18 eV increased with the electron fluence. To compare that, the level of EC -0.09 eV related to TDs was independent of electron fluence. In addition to that, reverse current of the diodes was increased with increasing irradiated electron fluence.

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References

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