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Doping of poly(3-hexylthiophene) nanofibers: microscopic morphology and electrical properties

Published online by Cambridge University Press:  10 March 2009

S. Desbief ,
G. Derue ,
Ph. Leclère ,
S. Lenfant ,
D. Vuillaume  and
R. Lazzaroni
S. Desbief*
Affiliation:
Laboratory for Chemistry for Novel Materials, University of Mons Hainaut/Materia Nova, 20 Place du Parc, 7000 Mons, Belgium
G. Derue
Affiliation:
Laboratory for Chemistry for Novel Materials, University of Mons Hainaut/Materia Nova, 20 Place du Parc, 7000 Mons, Belgium
Ph. Leclère
Affiliation:
Laboratory for Chemistry for Novel Materials, University of Mons Hainaut/Materia Nova, 20 Place du Parc, 7000 Mons, Belgium
S. Lenfant
Affiliation:
Molecular Nanostructures and Devices group, Institute for Electronics, Microelectronics and Nanotechnology (IEMN), CNRS, Avenue Poincaré, BP 60069, 59652 Cedex, Villeneuve d'Ascq, France
D. Vuillaume
Affiliation:
Molecular Nanostructures and Devices group, Institute for Electronics, Microelectronics and Nanotechnology (IEMN), CNRS, Avenue Poincaré, BP 60069, 59652 Cedex, Villeneuve d'Ascq, France
R. Lazzaroni
Affiliation:
Laboratory for Chemistry for Novel Materials, University of Mons Hainaut/Materia Nova, 20 Place du Parc, 7000 Mons, Belgium
*
sdesbief@averell.umh.ac.be
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Abstract

The microstructure of thin deposits of poly(3-hexylthiophene) on silicon surfaces is investigated as a function of the solution concentration, the maturation time and the solvent nature, with the aim of generating one monolayer of P3HT nanofibers on the surface. These films are then exposed to a NOPF6 solution, in order to oxidize the conjugated system and to produce conducting nanostructures. The effect of the chemical doping on the microscopic morphology and the electrical properties is analyzed on the basis of AFM and I-V measurements.

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