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Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviour

Published online by Cambridge University Press:  29 November 2002

A. Shiryaev ,
A. van Veen ,
A. Rivera ,
M. van Huis ,
T. Bus ,
W. M. Arnoldbik ,
N. Tomozeiu ,
F. H. P. M. Habraken ,
R. Delamare  and
E. Ntsoenzok
A. Shiryaev*
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands Institute of Crystallography, Leninsky Pr. 59, 119333 Moscow, Russia
A. van Veen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
A. Rivera
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
M. van Huis
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
T. Bus
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
W. M. Arnoldbik
Affiliation:
Utrecht University, Princetonplein 5, 3584 CC Utrecht, Postbus 80000, 3508 TA Utrecht, The Netherlands
N. Tomozeiu
Affiliation:
Utrecht University, Princetonplein 5, 3584 CC Utrecht, Postbus 80000, 3508 TA Utrecht, The Netherlands
F. H. P. M. Habraken
Affiliation:
Utrecht University, Princetonplein 5, 3584 CC Utrecht, Postbus 80000, 3508 TA Utrecht, The Netherlands
R. Delamare
Affiliation:
CERI/CEA, 3A rue de Ferollerie, 45071 Orleans, France
E. Ntsoenzok
Affiliation:
CERI/CEA, 3A rue de Ferollerie, 45071 Orleans, France
*
a_shiryaev@mailru.com a.vanveen@iri.tudelft.nl
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Abstract

Results of the comprehensive study of deuterium-implanted hexagonal SiC (4H and 6H) using optical absorption and infrared measurements, elastic recoil detection analysis, thermal desorption and positron annihilation spectroscopies are reported. It is shown that implanted deuterium mainly forms bonds with lattice atoms. The amount of deuterium in the form of interstitial molecules and in vacancies is considerably smaller. Ion implantations with fluences exceeding 1015 D+/cm−2 create point defects in concentrations sufficiently high for complete positron trapping. Recrystallisation of the amorphised SiC does not remove the positron traps.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 23 , Issue 1 , July 2003 , pp. 11 - 18
Copyright
© EDP Sciences, 2003

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