Electron-induced X-ray emission spectroscopy (EXES) combined with asemi-empirical electron scattering model, which describes the ionizations inside a material under electron irradiation, is used to determine the depth profile ofshallow and ultra-shallow dopants in silicon. Two approaches are presented, dependingon whether the shape of the profile is known or not. To test the method, X-ray intensities of implanted phosphorus atoms at various energies and doses in silicon aremeasured at a wide range of incident electron energies. From the experimental datacombined with the model, the resulting profile parameters are determined. Comparisonof secondary ion mass spectrometry and EXES associated with the electron scatteringmodel shows that the proposed method is suitable for determining the shallow implant profileswith a depth resolution of one nanometer.