Hostname: page-component-7dd5485656-bt4hw Total loading time: 0 Render date: 2025-10-31T22:34:49.283Z Has data issue: false hasContentIssue false
  • English
  • Français

Annealing of radiation damage in MOS devices: Study by diode parameter determination

Published online by Cambridge University Press:  15 January 1999

E. Bendada  and
K. Raïs
E. Bendada
Affiliation:
Département de Génie Électrique, Université My Ismaïl-F.S.T, BP 509, Errachidia, Marocco
K. Raïs
Affiliation:
Laboratoire de Caractérisation des Composants à Semiconducteurs, Université Chouaïb Doukkali, BP 20, El Jadida, Marocco
Get access

Abstract

Previous modeling techniques of P–N junctions have been applied for studying the annealing of Gamma-ray damage in power MOSFETs. The degradation of the physical parameters of the body-drain junction for a dose rate of 103.8 rad/min is presented. Large decrease of the reverse recombination current, of the series resistance and of the ideality factor are shown to be related to the thermal anneal. These effects are discussed and explained by the evolution of the radiation-induced defects.

Keywords

Information

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 5 , Issue 1 , January 1999 , pp. 91 - 94
Copyright
© EDP Sciences, 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

Le Bras, L., Bendada, E., Mialhe, P., Blampain, E., Charles, J.P., J. Appl. Phys. 76, 5676 (1994). CrossRef
Sah, C.T., Noyce, R.N., Shockley, W., Proc. IRF 45, 1228 (1957). CrossRef
Mc Whorter, P.J., Whinokur, P.S., Appl. Phys. Lett. 48, 269 (1986).
Sah, C.T., Solar Cells 17, 1 (1986). CrossRef
Schwank, J.R., Winokur, P.S., McWhorter, P.J., Sexton, F.W., Dressendorfer, P.V., Turpin, D.C., IEEE Trans. Nucl. Sci. 31, 1434 (1984). CrossRef
Lakshmanna, V., Vengurlekar, A.S., J. Appl. Phys. 9, 4248 (1988).
Mc Whorter, P., Miller, S., Winokur, P., IEEE Trans. Nucl. Sci. 37, 1682 (1990). CrossRef
Derbenwick, V.F., Sander, H.H., IEEE Trans. Nucl. Sci. 24, 2244 (1977). CrossRef
Winokur, P.S., Boesch, H.E., IEEE Trans. Nucl. Sci. 32, 4088 (1981). CrossRef
Brucker, G.J., IEEE Trans. Nucl. Sci. 28, 4056 (1981). CrossRef