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Analytical calculation of site and surface reaction probabilities of SiHx radicals in PECVD process

Published online by Cambridge University Press:  20 March 2013

Oumelkheir Babahani ,
Fethi Khelfaoui  and
Mohammed Tayeb Meftah
Oumelkheir Babahani
Affiliation:
Laboratoire LRPPS, Faculté des Sciences et de la Technologie et des Sciences de la Matière, Université Kasdi Merbah Ouargla, Ouargla 30000, Algeria
Fethi Khelfaoui*
Affiliation:
Laboratoire LRPPS, Faculté des Sciences et de la Technologie et des Sciences de la Matière, Université Kasdi Merbah Ouargla, Ouargla 30000, Algeria
Mohammed Tayeb Meftah
Affiliation:
Laboratoire LRPPS, Faculté des Sciences et de la Technologie et des Sciences de la Matière, Université Kasdi Merbah Ouargla, Ouargla 30000, Algeria
*
ae-mail: fethi.khelfaoui@gmail.com; khelfaoui.fe@univ-ouargla.dz
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Abstract

In this work we present a theoretical and mathematical relationship which calculates the site reaction probability (SRP) of the sticking on (Si-) dangling bonds (DB) or the SRP to abstract H from (Si-H) bonds, on the a-Si:H surface. The results are in agreement with those obtained by the Monte Carlo simulation. Using these probabilities allowed us to compute the surface reaction probability of SiHx radicals on a-Si:H for several values of the temperature. The surface reaction probability (SFRP) results show also an excellent agreement with other works found in the literature.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 62 , Issue 1 , April 2013 , 10301
Copyright
© EDP Sciences, 2013

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