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The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters

Published online by Cambridge University Press:  10 October 2012

A.F. Özdemir ,
T. Özsoy ,
Y. Kansız ,
M. Sancak ,
A. Kökce ,
N. Uçar  and
D.A. Aldemir
A.F. Özdemir*
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
T. Özsoy
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
Y. Kansız
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
M. Sancak
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
A. Kökce
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
N. Uçar
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
D.A. Aldemir
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
*
ae-mail: ozdemir@fef.sdu.edu.tr
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Abstract

The current-voltage (I-V) characteristic of the Au/n-GaAs/Au-Ge Schottky diode with native oxide interfacial layer has been studied as a function of hydrostatic pressure. The ideality factor and barrier height of the diode have shown hydrostatic pressure dependence. The pressure coefficient of the flat-band barrier height was found to be 10.3 meV/kbar and the flat-band barrier height at zero pressure was calculated as 0.854 eV. Additionally, the energy distribution of interface state density was determined from I-V characteristics for each hydrostatic pressure value.

Information

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 60 , Issue 1 , October 2012 , 10101
Copyright
© EDP Sciences, 2012

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