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Amorphous to crystalline induced CoSi2 phase formationin Co-implanted Si

Published online by Cambridge University Press:  06 February 2008

S. Abhaya ,
G. Amarendra ,
S. Kalavathi ,
B. K. Panigrahi ,
S. Saroja ,
K. G. M. Nair ,
V. S. Sastry  and
C. S. Sundar
S. Abhaya
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, T.N, India
G. Amarendra*
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, T.N, India
S. Kalavathi
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, T.N, India
B. K. Panigrahi
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, T.N, India
S. Saroja
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, T.N, India
K. G. M. Nair
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, T.N, India
V. S. Sastry
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, T.N, India
C. S. Sundar
Affiliation:
Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, T.N, India
*
amar@igcar.gov.in
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Abstract

Formation of CoSi2 in Co implanted Si sample has been studied using glancing incidence X-ray diffraction and depth resolvedpositron annihilation techniques. The implanted sample exhibits near-surface amorphization in the temperature range between 300 K and 670 K. It is found that recrystallization of Si occurs at 870 K which inturn, triggers the formation of the CoSi2 phase at lower temperatures as compared to that obtained in thin film systems. The results are discussed in the light of enhanced intermixing brought by defect migration, associated with recrystallization.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 41 , Issue 2 , February 2008 , pp. 107 - 110
Copyright
© EDP Sciences, 2008

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