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FEM modeling of finite electronically controllable PBG structures

Published online by Cambridge University Press:  21 December 2004

B. Delhom ,
E. Richalot ,
S. Mengue  and
O. Picon
B. Delhom
Affiliation:
ESYCOM, Université de Marne-la-Vallée, 5 boulevard Descartes, Champs-sur-Marne, 77454 Marne-la-Vallée Cedex 2, France
E. Richalot*
Affiliation:
ESYCOM, Université de Marne-la-Vallée, 5 boulevard Descartes, Champs-sur-Marne, 77454 Marne-la-Vallée Cedex 2, France
S. Mengue
Affiliation:
ESYCOM, Université de Marne-la-Vallée, 5 boulevard Descartes, Champs-sur-Marne, 77454 Marne-la-Vallée Cedex 2, France
O. Picon
Affiliation:
ESYCOM, Université de Marne-la-Vallée, 5 boulevard Descartes, Champs-sur-Marne, 77454 Marne-la-Vallée Cedex 2, France
*
elodie.richalot@univ-mlv.fr
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Abstract

A numerical method based on the finite-element methodis developed to study active photonic bandgap materials (PBG) offinite size. After validating our method, we focus on metallicPBGs including diodes. These structures are characterized in thefar-field and the near-field, and the influence of diode statesand material finiteness is examined.

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Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 29 , Issue 2 , February 2005 , pp. 133 - 142
Copyright
© EDP Sciences, 2005

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References

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