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A drift-diffusion model for semiconductors with temperature effects

Published online by Cambridge University Press:  21 September 2009

Xiangsheng Xu
Xiangsheng Xu
Affiliation:
Department of Mathematics and Statistics, Mississippi State University, Mississippi State, MS 39762, USA
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Abstract

We establish an existence theorem for a stationary semiconductor model which takes into account the current generated by the gradient of the temperature.

Information

Type
Research Article
Information
Proceedings of the Royal Society of Edinburgh Section A: Mathematics , Volume 139 , Issue 5 , October 2009 , pp. 1101 - 1119
Copyright
Copyright © Royal Society of Edinburgh 2009

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