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Influence of shot peening on surface-layer characteristics of a monocrystalline nickel-based superalloy

Published online by Cambridge University Press:  29 February 2012

Y. H. Chen ,
C. H. Jiang ,
Z. Wang  and
K. Zhan
Y. H. Chen
Affiliation:
School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China and School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
C. H. Jiang*
Affiliation:
School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Z. Wang
Affiliation:
School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
K. Zhan
Affiliation:
School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
*
a)Author to whom correspondence should be addressed. Electronic mail: chenyanhua97@163.com
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Abstract

Shot peening was conducted on [100]- and [111]-oriented monocrystalline nickel-based superalloy samples to study the effect of crystal orientation on the distributions of the residual stress and evolution of microstructures in the deformation layers on the sample surfaces as a function of the coverage up to 400%. The XRD results show that the orientation randomizations and the values of compressive residual stress in the [111]-oriented samples are relatively higher than those in the [001]-oriented samples. Moreover, the residual-stress distribution in each sample is anisotropic, and the residual stress is maximum along the 〈110〉 direction. This phenomenon can be explained by the anisotropic properties of a single-crystal alloy and mechanism of the dislocation slip in the plastic deformation layers. Line profile analysis was also used to obtain microstructural information of the samples.

Keywords

shot peeningnickel alloyresidual stressmicrostructureline profile analysisX-ray powder diffraction
Type
Technical Articles
Information
Powder Diffraction , Volume 25 , Issue 4 , December 2010 , pp. 355 - 358
Copyright
Copyright © Cambridge University Press 2010

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