Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Pereira, Sérgio
Correia, Maria. R.
Pereira, Estela
Trager-Cowan, C.
Sweeney, F.
Edwards, P.R.
O'Donnell, K.P.
Alves, E.
Sequeira, A.D.
and
Franco, N.
2000.
Strain and Compositional Analysis of InGaN/GaN Layers.
MRS Proceedings,
Vol. 639,
Issue. ,
Pereira, S.
Correia, M. R.
Pereira, E.
O’Donnell, K. P.
Alves, E.
Sequeira, A. D.
and
Franco, N.
2001.
Interpretation of double x-ray diffraction peaks from InGaN layers.
Applied Physics Letters,
Vol. 79,
Issue. 10,
p.
1432.
Pereira, S.
Correia, M. R.
Monteiro, T.
Pereira, E.
Alves, E.
Sequeira, A. D.
and
Franco, N.
2001.
Compositional dependence of the strain-free optical band gap in InxGa1−xN layers.
Applied Physics Letters,
Vol. 78,
Issue. 15,
p.
2137.
2001.
Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties.
Vol. a,
Issue. ,
p.
1.
Hwang, Jih-Shang
Lee, Chung-Han
Yang, Fuh-Hsiang
Chen, Kuei-Hsien
Hwa, Luu-Gen
Yang, Ying-Jay
and
Chen, Li-Chyong
2001.
Resistive heated MOCVD deposition of InN films.
Materials Chemistry and Physics,
Vol. 72,
Issue. 2,
p.
290.
Ranade, M. R.
Tessier, F.
Navrotsky, A.
and
Marchand, R.
2001.
Calorimetric determination of the enthalpy of formation of InN and comparison with AlN and GaN.
Journal of Materials Research,
Vol. 16,
Issue. 10,
p.
2824.
Pereira, S.
Correia, M. R.
Pereira, E.
O’Donnell, K. P.
Trager-Cowan, C.
Sweeney, F.
and
Alves, E.
2001.
Compositional pulling effects inInxGa1−xN/GaNlayers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study.
Physical Review B,
Vol. 64,
Issue. 20,
Yang, Fuh-Hsiang
Jih-Shang
Hwang
Chen, Kuei-Hsien
Yang, Ying-Jay
Lee, Tzung-Han
Hwa, Luu-Gen
and
Chen, Li-Chyong
2002.
High growth rate deposition of oriented hexagonal InN films.
Thin Solid Films,
Vol. 405,
Issue. 1-2,
p.
194.
Pereira, S
Correia, M.R
Pereira, E
O'Donnell, K.P
Martin, R.W
White, M.E
Alves, E
Sequeira, A.D
and
Franco, N
2002.
Splitting of X-ray diffraction and photoluminescence peaks in InGaN/GaN layers.
Materials Science and Engineering: B,
Vol. 93,
Issue. 1-3,
p.
163.
Pereira, S.
Correia, M. R.
Pereira, E.
O’Donnell, K. P.
Alves, E.
Sequeira, A. D.
Franco, N.
Watson, I. M.
and
Deatcher, C. J.
2002.
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping.
Applied Physics Letters,
Vol. 80,
Issue. 21,
p.
3913.
Monemar, B.
Paskov, P.P.
Bergman, J. P.
Pozina, G.
Darakchieva, V.
Iwaya, M.
Kamiyama, Satoshi
Amano, H.
and
Akasaki, I.
2002.
Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 7,
Issue. ,
Vickers, M. E.
Kappers, M. J.
Smeeton, T. M.
Thrush, E. J.
Barnard, J. S.
and
Humphreys, C. J.
2003.
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering.
Journal of Applied Physics,
Vol. 94,
Issue. 3,
p.
1565.
Paszkowicz, W.
Černý, R.
and
Krukowski, S.
2003.
Rietveld refinement for indium nitride in the 105–295 K range.
Powder Diffraction,
Vol. 18,
Issue. 2,
p.
114.
Lee, H.H
Jang, H.W
Kim, D.H
Noh, D.Y
Yi, M.S
Tang, M
and
Liang, K.S
2003.
Structural characterization of InGaN thin films and multiple quantum wells: an approach of combining various X-ray scattering methods.
Physica B: Condensed Matter,
Vol. 336,
Issue. 1-2,
p.
109.
Darakchieva, V.
Paskov, P. P.
Valcheva, E.
Paskova, T.
Monemar, B.
Schubert, M.
Lu, H.
and
Schaff, W. J.
2004.
Deformation potentials of the E1(TO) and E2 modes of InN.
Applied Physics Letters,
Vol. 84,
Issue. 18,
p.
3636.
Darakchieva, V.
Paskov, P.P.
Valcheva, E.
Paskova, T.
Schubert, M.
Bundesmann, C.
Lu, H.
Schaff, W.J.
and
Monemar, B.
2004.
Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties.
Superlattices and Microstructures,
Vol. 36,
Issue. 4-6,
p.
573.
Maleyre, Bénédicte
Briot, Olivier
and
Ruffenach, Sandra
2004.
MOVPE growth of InN films and quantum dots.
Journal of Crystal Growth,
Vol. 269,
Issue. 1,
p.
15.
Briot, O.
Gil, B.
Maleyre, B.
Ruffenach, S.
Pinquier, C.
Demangeot, F.
and
Frandon, J.
2004.
Strain‐induced correlations between the phonon frequencies of indium nitride.
physica status solidi (c),
Vol. 1,
Issue. 6,
p.
1420.
Che, Song-Bek
Terashima, Wataru
Ishitani, Yoshihiro
Yoshikawa, Akihiko
Matsuda, Takeyoshi
Ishii, Hirotatsu
and
Yoshida, Seikoh
2005.
Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy.
Applied Physics Letters,
Vol. 86,
Issue. 26,
Wang, Xinqiang
Che, Song-Bek
Ishitani, Yoshihiro
and
Yoshikawa, Akihiko
2006.
Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy.
Journal of Applied Physics,
Vol. 99,
Issue. 7,