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Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN

Published online by Cambridge University Press:  02 March 2011

V. Kachkanov ,
K.P. O’Donnell ,
C. Rice ,
D. Wolverson ,
R.W. Martin ,
K. Lorenz ,
E. Alves  and
M. Bockowski
V. Kachkanov
Affiliation:
Diamond Light Source Ltd, Didcot OX11 0DE, United Kingdom
K.P. O’Donnell
Affiliation:
SUPA Department of Physics, University of Strathclyde, Glasgow G4 0NG, United Kingdom
C. Rice
Affiliation:
Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
D. Wolverson
Affiliation:
Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
R.W. Martin
Affiliation:
SUPA Department of Physics, University of Strathclyde, Glasgow G4 0NG, United Kingdom
K. Lorenz
Affiliation:
Instituto Tecnológico e Nuclear, Sacavém 2686-953, Portugal
E. Alves
Affiliation:
Instituto Tecnológico e Nuclear, Sacavém 2686-953, Portugal
M. Bockowski
Affiliation:
Institute of High Pressure Physics, Polish Academy of Science 01-142 Warsaw, Poland
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Abstract

We report the magnetic field splittings of emission lines assigned to the 5D0–7F2 transitions of Eu3+ centres in GaN. The application of a magnetic field in the c-axis direction (B ‖ c ) leads to a splitting of the major lines at 621 nm, 622 nm and 622.8 nm into two components. The Zeeman splitting is linear with magnetic field up to 5 Tesla for each line. In contrast, a magnetic field applied in the growth plane (B ┴ c ) does not influence the photoluminescence spectra. The estimated g-factors vary slightly from sample to sample with mean values of g‖ ~2.8, ~1.5 and ~2.0 for the emission lines at 621 nm, 622 nm and 622.8 nm respectively.

Keywords

Euion-implantationnitride

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References

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