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Yellow Luminescence and Associated Odmr in Movpe Gan: A Comparison of Defect Models

Published online by Cambridge University Press:  10 February 2011

P. W. Mason ,
A. Dörnen ,
V. Härle ,
F. Scholz  and
G. D. Watkins
P. W. Mason
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, PA 18015
A. Dörnen
Affiliation:
IV Physikalisches Institut, Universitat Stuttgart, D-70550 Stuttgart, Germany
V. Härle
Affiliation:
IV Physikalisches Institut, Universitat Stuttgart, D-70550 Stuttgart, Germany
F. Scholz
Affiliation:
IV Physikalisches Institut, Universitat Stuttgart, D-70550 Stuttgart, Germany
G. D. Watkins
Affiliation:
Dept. of Physics, Lehigh University, Bethlehem, PA 18015
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Abstract

Two positive ODMR resonances are commonly observed on a luminescence band in GaN at 2.2 eV, one identified as a shallow donor, the other currently unidentified. We here report a study of their dependencies on a variety of experimental parameters, including microwave modulation frequency, microwave power, photoexcitation power and photoexcitation energy. ODMR simulations using two theoretical models are compared to experimental results which are consistent with spin-dependent recombination between the two defects, assuming the donor has a spin-lattice relaxation time shorter than the spin-dependent recombination lifetime. The photoexcitation energy dependence suggests that the spin-dependent recombination associated with the 2.2 eV band is not the same recombination that is responsible for the luminescence. This supports the two stage model put forth by Glaser et al. for the luminescence process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 793
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Ogino, T. and Aoki, M., Jap. Jour. Appl. Phys. 19, 2395 (1980).Google Scholar
2. Glaser, E.R., Kennedy, T.A., Doverspike, K., Rowland, L.B., Gaskill, D.K., Frietas, J.A. Jr, Asif Khan, M., Olson, D.T., Kuznia, J.N., and Wickenden, D.K., Phys. Rev. B 51 13,326 (1995).Google Scholar
3. Koschnick, F.K., Spaeth, J.M., Glaser, E.R., Doverspike, K., Rowland, L.B., Gaskill, D.K., and Wickenden, D.K., Mat. Sci. Forum 196–201, 37 (1995).Google Scholar
4. Kaufmann, U., Kunzer, M., Merz, C., Akasaki, I., and Amano, H., in Gallium Nitride and Related Materials, ed. Ponce, By F.A., Dupuis, R.D., Nakamura, S. and Edmond, J.A. (MRS Symposium Vol. 395, Pittsburgh 1996), p. 633.Google Scholar
5. Hofmann, D.M., Kovalev, D., Steude, G., Meyer, B.K., Hoffmann, A., Eckey, L., Heitz, R., Detchprom, T., Amano, H., and Akasaki, I., Phys. Rev. B 52, 16,702 (1995).Google Scholar
6. Suski, T., Perlin, P., Teisseyre, H., Leszczynski, M., Grzegory, I., Jun, J., Bockowski, M., Porowski, S., and Moustakas, T.D., Appl. Phys. Lett. 67, 2188 (1995).Google Scholar
7. Nazare, M.H., Mason, P.W., Watkins, G.D., and Kanda, H., Phys. Rev. B 51, 16,741 (1995).Google Scholar
8. Carlos, W.E., Freitas, J.A. Jr., Khan, M. Asif., Olson, D.T., and Kunzia, J.N., Phys. Rev. B 48, 17,878 (1993).Google Scholar
9. Rong, F.C., Barry, W.A., Donegan, J.F., and Watkins, G.D., Phys. Rev. B 54, 7779 (1996).Google Scholar
10. Barry, W.A. and Watkins, G.D., Phys. Rev. B 54, 7789 (1996).Google Scholar
11. Dunstan, D.J. and Davies, J.J., J. Phys. C 12, 2927 (1979).Google Scholar