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X-Ray Photoemission Study of Silicon Nitride-GaAs Interfaces in Relation with GaAs Mesfet Passivation

Published online by Cambridge University Press:  25 February 2011

Patrick Alnot ,
J. Olivier ,
F. Wyczisk ,
J. F. Peray  and
R. Joubart
Patrick Alnot
Affiliation:
LCR THOMSON-CSF Domaine de Corbeville 91401 ORSAY Cedex, FRANCE.
J. Olivier
Affiliation:
LCR THOMSON-CSF Domaine de Corbeville 91401 ORSAY Cedex, FRANCE.
F. Wyczisk
Affiliation:
LCR THOMSON-CSF Domaine de Corbeville 91401 ORSAY Cedex, FRANCE.
J. F. Peray
Affiliation:
LCR THOMSON-CSF Domaine de Corbeville 91401 ORSAY Cedex, FRANCE.
R. Joubart
Affiliation:
DAG THOMSON-SC Domaine de Corbeville 91401 ORSAY Cedex FRANCE.
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Abstract

We have studied the influence of different GaAs surface treatments on the chemical composition and electrical behavior of the Si 3 N4 -GaAs interface, where Si 3 N4 was plasma enhanced chemical vapor deposited (PECVD) onto the treated GaAs(100) substrate. The chemistry of the resulting interface has been studied by X-ray photoelectron spectroscopy (XPS). It has been demonstrated that the chemical composition of the Si 3 N4-GaAs interface is drastically dependent on GaAs surface pretreatment and r.f. plasma excitation frequency. Output-input powers characteristics have been measured on chemically treated planar MESFET after Si3N4. passivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 279
Copyright
Copyright © Materials Research Society 1987

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References

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