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X-ray Determination and Finite-Element Modeling of Stress in Passivated Al-0.5%Cu Lines During Thermal Cycling.

Published online by Cambridge University Press:  21 February 2011

Paul R. Besser ,
Anne Sauter Mack ,
David Fraser  and
John C. Bravman
Paul R. Besser
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford, CA 94305
Anne Sauter Mack
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051
David Fraser
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051
John C. Bravman
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford, CA 94305
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Abstract

We have measured the principal strain state of AI-0.5%Cu lines passivated with silicon nitride directly and used it to calculate the stress state. The stress was determined as the lines were thermally cycled from room temperature to 450°C. The general stress-temperature behavior shows good fundamental agreement with that calculated using finite-element methods, although the magnitude of the stresses measured with x-rays is less than that predicted by modeling due to stressinduced voiding in the lines. This is shown with a high voltage scanning transmission electron microscope (STEM) operated in the backscattering mode.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 287
Copyright
Copyright © Materials Research Society 1993

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