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X-Ray Characterization of Mbe-Grown InxGal-xSb/InAs Strained Layer Superlattices

Published online by Cambridge University Press:  22 February 2011

P. C. Chow ,
A. Vigliante ,
S. C. Moss ,
J. T. Zborowski ,
T. D. Golding  and
H. D. Shih
P. C. Chow
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5504
A. Vigliante
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5504
S. C. Moss
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5504
J. T. Zborowski
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5504
T. D. Golding
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5504
H. D. Shih
Affiliation:
Department of Physics and Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5504
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Abstract

Strain can play a critical role in determining the band structure and optical properties of semiconducting superlattices. Mailhiot and Smith [1] have predicted that strain, induced by mismatch, in InxGal-xSb/InAs makes the superlattice a candidate for infrared detectors. We present a preliminary analysis of the structure, in particular the strain in the layers, of an InxGal-xSb/InAs superlattice, which shows infrared absorption. Our ultimate objective is to relate the structural properties to the optical absorption and an extended (kinematical) diffraction treatment is presented for accomplishing this.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 219
Copyright
Copyright © Materials Research Society 1991

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References

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