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X-Ray Characterisation of Boron Delta Layers in Si and SiGe

Published online by Cambridge University Press:  22 February 2011

A. R. Powell ,
R. A. Kubiak ,
T. E. Whall ,
E. H. C. Parker  and
D. K. Bowen
A. R. Powell
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL England
R. A. Kubiak
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL England
T. E. Whall
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL England
E. H. C. Parker
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL England
D. K. Bowen
Affiliation:
Department of Engineering, University of Warwick, Coventry CV4 7AL England
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Abstract

We demonstrate the growth, by MBE, of high sheet density B delta layers in both Si and SiGe epitaxial layers. Double Crystal X-Ray Diffraction is shown to be a non-destructive method of characterising the width of very narrow (0.3 nm) delta layers and the sheet density of the activated B. The ability of delta layers to withstand high temperature anneals is considered and it is found that a 750 °C anneal for 1 hour broadens the delta layer to beyond the width required for carrier confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 115
Copyright
Copyright © Materials Research Society 1991

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References

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