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XPS study of sub-monolayer native oxide on HF-treated Si Surfaces

Published online by Cambridge University Press:  21 February 2011

F. Yano ,
A. Hiraoka ,
T. Itoga ,
H. Kojima ,
K. Kanehori  and
Y. Mitsui
F. Yano
Affiliation:
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185, Japan
A. Hiraoka
Affiliation:
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185, Japan
T. Itoga
Affiliation:
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185, Japan
H. Kojima
Affiliation:
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185, Japan
K. Kanehori
Affiliation:
Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo 185, Japan
Y. Mitsui
Affiliation:
Hitachi, Ltd., Semiconductor and Integrated Circuits Division, Kodaira, Tokyo 187, Japan
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Abstract

Sub-monolayer native oxide on Si is quantitatively characterized by conventional XPS, us-ing an Ols binding energy as a reference in spectrum decomposition of Si2p. This gives the average thicknesses of Si dioxide and Si suboxide in the sub-monolayer region. Using mis tech-nique, we investigate various native oxidation processes. We have found that oxygen dissolved in the HF solution influences native oxidation speed afterward. Furthermore As implantation at high concentrations (2 × 1015 cm-2) in Si dramatically changes the oxidation process: the layer-by-layer feature clearly observed in undoped samples is entirely obscured in implanted samples.

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