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XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts

Published online by Cambridge University Press:  28 February 2011

T. Sameshima  and
S. Usui
T. Sameshima
Affiliation:
Sony Corporation Research Center, Yokohama 240, JAPAN
S. Usui
Affiliation:
Sony Corporation Research Center, Yokohama 240, JAPAN
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Abstract

Mo-gate n-channel poly-Si TFTs have been fabricated for the first time at a low processing temperature of 26°C. 500 to 1000A thick a-Si:H was successfully crystallized by pulsed XeCl excimer laser (308nm) annealing without heating the glass substrate. The channel mobility of the TFT was 180 cm2/V.sec when the a-Si:H was annealed at energy density of 200 mJ/cm2.

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References

[1] Ugai, Y., Murakami, Y., J.Tamamura and Aoki, S., SID Symp. Digests, 308(1984).Google Scholar
[2] Snell, A.J., Mackenzie, K.D., Spear, W.E., and LeComber, P.G., Appl. Phys. 24, 357(1981).CrossRefGoogle Scholar
[3] Sussmann, R.S., Harris, A.J.,and Ogden, R., J. Non-crystl. Solid 35,36, 249 (1980).Google Scholar
[4] Cody, G.D., Wronsky, C.R., Abeles, B., Stephens, R.B. and Brooks, B., Solar Cells, 2, 227(1980).CrossRefGoogle Scholar
[5] Chelikowsky, J.R. and Cohen, M.L., Phys. Rev. B 10, 5095(1974).CrossRefGoogle Scholar
[6] Narayan, J., White, C.W., Aziz, M.J., Stritzker, B., and Walthuis, A., J. Appl. Phys. 57, 564(1984).Google Scholar
[7] Lucovsky, G., Nemanich, R.J., and Knights, J.C., Phys. Rev. B 19, 2064(1979).Google Scholar
[8] Paul, W., Solid State Commun. 3, 283(1980).Google Scholar
[9] Pollack, G.P., Richardson, W.F., Malhi, S.D.S., Bonifield, T., Shichijo, H., Banerjee, S., Elahy, M., Shah, A.H., Womack, R., and Chatterjee, R.K., IEEE Electron Device Lett. EDL–5, 468(1984).Google Scholar
[10] Matsui, M., Shiraki, Y., and Maruyama, E., J. Appl. Phys. 55, 1590(1984).CrossRefGoogle Scholar
[11] Oana, Y., SID Symp. Digest 312(1984).Google Scholar