Hostname: page-component-54dcc4c588-sdd8f Total loading time: 0 Render date: 2025-10-07T07:39:47.905Z Has data issue: false hasContentIssue false
  • English
  • Français

Wrap around field plate technique for GaN Schottky barrier diodes

Published online by Cambridge University Press:  19 December 2014

Sowmya Kolli ,
Robert Hickman  and
Bruce W Alphenaar
Sowmya Kolli
Affiliation:
Department of Electrical and Computer Engineering, University of Louisville, Louisville, KY 40292
Robert Hickman
Affiliation:
Department of Electrical and Computer Engineering, University of Louisville, Louisville, KY 40292 APIQ Semiconductor LLC, Louisville, KY 40217-7719
Bruce W Alphenaar
Affiliation:
Department of Electrical and Computer Engineering, University of Louisville, Louisville, KY 40292
Get access

Abstract

In this paper, we propose a wrap around field termination technique for a vertical Schottky barrier diode fabricated on a free standing GaN substrate. Unlike conventional field plate designs, in the wrap around structure the field plate surrounds the active device area. This allows for better control of the electric field distribution, and reduces field-crowding. 2D finite element simulations using ATLAS show a uniform field distribution across the device. Calculations show that the Ron increases relative to the conventional field plate. A break down voltage of 1300V was predicted for a 5um thick epilayer.

Keywords

III-Vdevicessimulation

Information

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t02-07
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

Zhang, Y. H., Sun, M., Piedra, D., Azize, M., Zhang, X., Fujishima, T., et al. ., “GaN-on-Si Vertical Schottky and p-n Diodes,” Ieee Electron Device Letters, vol. 35, pp. 618–620, Jun 2014.Google Scholar
Bandic, Z. Z., Bridger, P. M., Piquette, E. C., McGill, T. C., Vaudo, R. P., Phanse, V. M., et al. ., “High voltage (450 V) GaN schottky rectifiers,” Applied Physics Letters, vol. 74, pp. 1266–1268, Mar 1999.CrossRefGoogle Scholar
Saitoh, Y., Sumiyoshi, K., Okada, M., Horii, T., Miyazaki, T., Shiomi, H., et al. ., “Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates,” Applied Physics Express, vol. 3, Aug 2010.CrossRefGoogle Scholar
Ip, K., Baik, K. H., Luo, B., Ren, F., Pearton, S. J., Park, S. S., et al. ., “High current bulk GaN Schottky rectifiers,” Solid-State Electronics, vol. 46, pp. 2169–2172, Dec 2002.CrossRefGoogle Scholar
Mohammad, S. N., Kub, F. J., and Eddy, C. R. Jr., “Field-plate design for edge termination in silicon carbide high-power Schottky diodes,” Journal of Vacuum Science & Technology B, vol. 29, Mar 2011.CrossRefGoogle Scholar
Ozbek, A. M. and Baliga, B. J., “Planar Nearly Ideal Edge-Termination Technique for GaN Devices,” Ieee Electron Device Letters, vol. 32, pp. 300–302, Mar 2011.CrossRefGoogle Scholar
Baik, K. H., Irokawa, Y., Ren, F., Pearton, S. J., Park, S. S., and Park, Y. J., “Design of junction termination structures for GaN Schottky power rectifiers,” Solid-State Electronics, vol. 47, pp. 975–979, Jun 2003.CrossRefGoogle Scholar
Laroche, J. R., Ren, F., Baik, K. W., Pearton, S. J., Shelton, B. S., and Peres, B., “Design of edge termination for GaN power Schottky diodes,” Journal of Electronic Materials, vol. 34, pp. 370–374, Apr 2005.CrossRefGoogle Scholar
Zhang, A. P., Johnson, J. W., Luo, B., Ren, F., Pearton, S. J., Park, S. S., et al. ., “Vertical and lateral GaN rectifiers on free-standing GaN substrates,” Applied Physics Letters, vol. 79, pp. 1555–1557, Sep 3 2001.CrossRefGoogle Scholar