Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-28T23:49:13.268Z Has data issue: false hasContentIssue false
  • English
  • Français

Wet Oxidation of Poly-Si1-xGex Layer Grown on SiO2/Si

Published online by Cambridge University Press:  10 February 2011

Ping Han ,
Mang Wu ,
Junru Ma ,
XiaoDong Huang ,
Hao Chen ,
Liqun Hu  and
Youdou Zheng
Ping Han
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Mang Wu
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Junru Ma
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
XiaoDong Huang
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Hao Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Liqun Hu
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Youdou Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing, 210093, China
Get access

Abstract

In this paper, we report on the experiment results of wet oxidation of Si1-xGex on SiO2. AES and XPS measurements were performed to study the effect of the oxidation on the Si1-xGex layer. A possible mechanism was proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 343
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Patton, Gary L., Iyer, Suramanian S., Iyer, S., Delage, Sylvain L., Tiwari, Sandip, Stork, Johannes M.C., IEEE Electron Device Letters, Vol.9, No.4, April, 165 (1988).Google Scholar
2. Lin, True-Lon, Ksendzov, A., Dejewski, Suzan M., Jones, Erie W., Fathauer, Robert W., Krabach, Timothy N., and Maserjian, Joseph, IEEE Transactions on Electron Devices, Vol.38, No.5, 1141 (1991).Google Scholar
3. Karunasiri, R. P. G., Park, J. S., and Wang, K. L., Appl. Phys. Lett. 59(20), 2588(1991).Google Scholar
4. King, Tsu-Jae, Pfiester, James R., and Saraswat, Krishna C., IEEE Electron Device Letters, Vol. 12, 53(1991)Google Scholar
5. LeGoues, F. K., Rosenbery, R., and Meyerson, B. S., Appl. phys. Lett., 54, 644(1989)Google Scholar
6. Nayak, D. K., Kamjoo, K., Park, J. S., Woo, J. C. S., and Wang, K. L., Appl. phys. Lett., 57, 369(1990)Google Scholar
7. Liou, H. K., Mei, P., Gennser, U., and Yang, E. S. Appl. phys. Lett., 59, 1200(1991)Google Scholar
8. Frey, E. C., Yu, N., Patnaik, B., Parikh, N. R., Swanson, M. L., and Chu, W. K., J. Appl. Phys., 74, 4750(1993)Google Scholar
9. Zheng, Y., Zhang, R., L. H., , Gu, S., Wang, R., Han, P., and Jiang, R., Mater. Res. Soc. Symp. Proc. 263, 227(1992).Google Scholar