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Wet Oxidation of Epitaxial Ge.36Si.64 on (100)Si

Published online by Cambridge University Press:  22 February 2011

W. S. Liu ,
G. Bai ,
M-A. Nicolet ,
C. H. Chern ,
V. Arbet  and
K. L. Wang
W. S. Liu
Affiliation:
California Institute of Technology, Pasadena, CA 91106
G. Bai
Affiliation:
California Institute of Technology, Pasadena, CA 91106
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91106
C. H. Chern
Affiliation:
University of California, Los Angeles, CA 90024
V. Arbet
Affiliation:
University of California, Los Angeles, CA 90024
K. L. Wang
Affiliation:
University of California, Los Angeles, CA 90024
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Abstract

The thermal oxidation of epitaxial Ge.36Si.64 on (100)Si is investigated experimentally for a wet ambient at 700°C and 1000°C. A pure silicon dioxide layer with pile-up of Ge behind the oxide is formed at 1000°C. At 700°C, however, both Ge and Si are oxidized. The Ge is included uniformly into the oxide layer without changing the initial Ge/Si ratio. The result at 1000°C follows the thermodynamical picture which predicts the same result at 700°C also, contrary to observation. The different result at 700°C is due to kinetic constraints which can be explained by different activation energies for the rate of the oxidation reaction and for the Ge or Si diffusivities in GeSi.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 259
Copyright
Copyright © Materials Research Society 1991

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References

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