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Wafer Bonding of Silicon Carbide and Gallium Nitride

Published online by Cambridge University Press:  21 March 2011

Jaeseob Lee ,
T. E. Cook ,
E. N. Bryan ,
J. D. Hartman ,
R. F. Davis  and
R. J. Nemanich
Jaeseob Lee
Affiliation:
Department of Material Science North Carolina State University, Raleigh, NC 27695
T. E. Cook
Affiliation:
Department of Material Science North Carolina State University, Raleigh, NC 27695
E. N. Bryan
Affiliation:
Engineering and Department of Physics North Carolina State University, Raleigh, NC 27695
J. D. Hartman
Affiliation:
Department of Material Science North Carolina State University, Raleigh, NC 27695
R. F. Davis
Affiliation:
Department of Material Science North Carolina State University, Raleigh, NC 27695
R. J. Nemanich
Affiliation:
Engineering and Department of Physics North Carolina State University, Raleigh, NC 27695 Department of Material Science North Carolina State University, Raleigh, NC 27695, E-mail address: Robert_Nemanich@ncsu.edu
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Abstract

Wafer bonding of SiC and GaN may prove important in the formation of high power heterojunction devices. Results of bonding SiC (C or Si surface) onto GaN (Ga surface) are presented. The samples were n-type 6H SiC and epitaxial n-type 2H(wurzite) GaN grown on SiC. The results demonstrate bonding for both possibilities, but the bonding of the C surface SiC to Ga surface GaN is more readily accomplished. A lower resistance was found for the C-face SiC/Ga-face GaN. The results indicate that the polarity of the interface is important for bonding of these materials.

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References

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