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Wafer Bonding for Backside Illuminated CMOS Image Sensors Fabrication

Published online by Cambridge University Press:  01 February 2011

Viorel Dragoi ,
Gerald Mittendorfer ,
Alexander Filbert  and
Markus Wimplinger
Viorel Dragoi
Affiliation:
v.dragoi@evgroup.com, EV Group, St. Florian/Inn, Austria
Gerald Mittendorfer
Affiliation:
g.mittendorfer@evgroup.com, EV Group, St. Florian/Inn, Austria
Alexander Filbert
Affiliation:
a.filbert@evgroup.com, EV Group, St. Florian/Inn, Austria
Markus Wimplinger
Affiliation:
m.wimplinger@evgroup.com, EV Group, St. Florian/Inn, Austria
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Abstract

Backside illuminated CMOS image sensors were developed in order to encompass the pixel area limitation due to metal interconnects. In this technology the fully processed CMOS wafer is bonded to a blank carrier wafer and then back-thinned in order to open the photosensitive sensor area. The process flows of the two main competing wafer bonding technologies used for this manufacturing process (adhesive bonding and low temperature plasma activated direct wafer bonding with polymer layers) will be reviewed.

Keywords

adhesivebondingchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F08-06
Copyright
Copyright © Materials Research Society 2010

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References

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