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Visible Electroluminescence of Porous Silicon Devices with a Solid State Contact

Published online by Cambridge University Press:  15 February 2011

A. Richter ,
W. Lang ,
P. Steiner ,
F. Kozlowski  and
H. Sandmaier
A. Richter
Affiliation:
Fraunhofer Institute for Solid State Technology, Hansastr. 27d W-8000 München 21, Germany
W. Lang
Affiliation:
Fraunhofer Institute for Solid State Technology, Hansastr. 27d W-8000 München 21, Germany
P. Steiner
Affiliation:
Fraunhofer Institute for Solid State Technology, Hansastr. 27d W-8000 München 21, Germany
F. Kozlowski
Affiliation:
Fraunhofer Institute for Solid State Technology, Hansastr. 27d W-8000 München 21, Germany
H. Sandmaier
Affiliation:
Fraunhofer Institute for Solid State Technology, Hansastr. 27d W-8000 München 21, Germany
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Abstract

The photoluminescence and electroluminescence of light emitting porous silicon (LEPOS) is described. The porous silicon is made by anodic dissolution of silicon in HF with an applied electrical current and illumination with visible light. Photoluminescence is observed using ultraviolet light, visible electroluminescence is achieved by applying a voltage to a solid state contact on top of the porous layer. The luminescence, the structure and the composition of the LEPOS are studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 209
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Memming, R., Schwandt, G., ”Anodic dissolution of silicon in hydrofluoric acid solutions”, Surface Science, vol.4, p. 109–124, 1966 Google Scholar
2. Beale, M. I. J., Benjamin, J. D., Uren, M. J., Chew, M. I. J., Cullis, A. G., ”An experimental and theoretical study of the formation and microstructure of porous silicon”, Journal of Crystal Growth, vol.73, p. 622–636, 1985 Google Scholar
3. Bomchil, G., Halimaoui, A., Herino, R., ”Porous silicon: the material and its applications to SOI technologies”, Microelectronic Engeneering, vol.8, p. 293–310, 1988 CrossRefGoogle Scholar
4. Pickering, C., Beale, M. I. J., Robbins, D. J., Pearson, P. J., Greef, R., ”Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon”, Journal Physics C, vol.17, p. 6535–6552, 1984 Google Scholar
5. Canham, L. T., ”Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers”, Appl. Phys Letters, vol.57(10), p. 1046–1048, 1990 Google Scholar
6. Halimaoui, A., Oules, C., Bomchil, G., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M., Muller, F., ”Electroluminescence in the visible range during anodic oxidation of porous silicon films”, Appl. Phys. Lett., vol. 59(3), p. 304–306, 1991 CrossRefGoogle Scholar
7. Lehmann, V., Gösele, U., ”Porous silicon formation: a quantum wire effect”, Appl. Phys. Letters, vol.58(8), p. 856–858, 1991 CrossRefGoogle Scholar
8. Richter, A., Steiner, P., Kozlowski, F., Lang, W., ”Current-Induced Light Emission from a Porous Silicon Device” Electron Device Letters, Vol.12, No 12, Dec. 1991 CrossRefGoogle Scholar