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Very High Mobility in Semimagnetic Semiconductors with Rare Earth

Published online by Cambridge University Press:  26 February 2011

Averous M ,
Lombos B.A. ,
Bruno A. ,
Lascaray J.P. ,
Fau C.  and
Lawrence M.F.
Averous M
Affiliation:
Groupe d'Etude des Semiconducteurs, U.S.T.L., Place E. Bataillon, 34060 - MONTPELLIER-Cédex, FRANCE
Lombos B.A.
Affiliation:
Concordia University, 1455 Maisonneuve Bd - Montréal, Québec, H3G IM8, CANADA.
Bruno A.
Affiliation:
Groupe d'Etude des Semiconducteurs, U.S.T.L., Place E. Bataillon, 34060 - MONTPELLIER-Cédex, FRANCE
Lascaray J.P.
Affiliation:
Groupe d'Etude des Semiconducteurs, U.S.T.L., Place E. Bataillon, 34060 - MONTPELLIER-Cédex, FRANCE
Fau C.
Affiliation:
Groupe d'Etude des Semiconducteurs, U.S.T.L., Place E. Bataillon, 34060 - MONTPELLIER-Cédex, FRANCE
Lawrence M.F.
Affiliation:
Concordia University, 1455 Maisonneuve Bd - Montréal, Québec, H3G IM8, CANADA.
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Abstract

A semimagnetic semiconductor with rare earth like magnetic ion is studied: Pb1-xGdxTe. Very high Hall mobilities were found up to 107 cm2/V.s. The magnetization is well fitted at 4.2K by a Curie-Weisslaw, with a Gaj's parameter of 1K. The value of JNN' the exchange in a Gd pair deduced from the susceptibility measurements is small, as expected, due to the specific character of Gadolinium (S state and 4f shell): JNN/k = - O.3°K for x = 0.025.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 141
Copyright
Copyright © Materials Research Society 1987

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References

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