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Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

Published online by Cambridge University Press:  03 September 2012

M. Ghisoni ,
A. W. Rivers ,
K. Lee ,
G. Parry ,
X. Zhang ,
A. Staton-Bevan ,
M. Pate ,
G. Hill ,
C. Button  and
J. S. Roberts
M. Ghisoni
Affiliation:
University of London Interdisciplinary Research Centre for Semiconductor Materials, Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, U.K.
A. W. Rivers
Affiliation:
University of London Interdisciplinary Research Centre for Semiconductor Materials, Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, U.K.
K. Lee
Affiliation:
University of London Interdisciplinary Research Centre for Semiconductor Materials, Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, U.K.
G. Parry
Affiliation:
University of London Interdisciplinary Research Centre for Semiconductor Materials, Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, U.K.
X. Zhang
Affiliation:
University of London Interdisciplinary Research Centre for Semiconductor Materials, Department of Materials, Imperial College of Science Technology and Medicine, London SW7 2BP, U. K.
A. Staton-Bevan
Affiliation:
University of London Interdisciplinary Research Centre for Semiconductor Materials, Department of Materials, Imperial College of Science Technology and Medicine, London SW7 2BP, U. K.
M. Pate
Affiliation:
SERC Central Facility for III-V Materials, University of Sheffield, Sheffield SI 3JD, U.K.
G. Hill
Affiliation:
SERC Central Facility for III-V Materials, University of Sheffield, Sheffield SI 3JD, U.K.
C. Button
Affiliation:
SERC Central Facility for III-V Materials, University of Sheffield, Sheffield SI 3JD, U.K.
J. S. Roberts
Affiliation:
SERC Central Facility for III-V Materials, University of Sheffield, Sheffield SI 3JD, U.K.
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Abstract

In this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 823
Copyright
Copyright © Materials Research Society 1992

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References

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