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UV-Sensitive Metal-Semiconductor Photodiodes on 6H-SIC.

Published online by Cambridge University Press:  21 February 2011

Christer Fröjdh ,
Göran Thungström ,
Hans-Erik Nilsson  and
C. Sture Petersson
Christer Fröjdh
Affiliation:
Also: Mid-Sweden University, Dept. of Electronics, S-851 70 SUNDSVALL, SWEDEN
Göran Thungström
Affiliation:
Also: Mid-Sweden University, Dept. of Electronics, S-851 70 SUNDSVALL, SWEDEN
Hans-Erik Nilsson
Affiliation:
Also: Mid-Sweden University, Dept. of Electronics, S-851 70 SUNDSVALL, SWEDEN
C. Sture Petersson
Affiliation:
Royal Institute of Technology, Dept of Solid State Electronics, Electrum 229, S-164 40 KISTA, SWEDEN
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Abstract

Schottky diodes on Silicon Carbide (SiC) are of interest for many applications because of the relatively simple fabrication process. In this work we have fabricated Schottky diodes by evaporation of Ti on 6H-SiC and measured their electrical and optical properties. Most of the diodes show good rectifying behaviour with low reverse current and an ideality factor below 1.20. The photoresponse of the diodes has been measured in the range 200 – 400 nm. The peak sensitivity was found to be at 270 nm.

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References

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