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Update On Synchrotron Radiation TXRF: New Results

Published online by Cambridge University Press:  10 February 2011

S. Brennan ,
P. Pianetta ,
S. Ghosh ,
N. Takaura ,
C. Wiemer ,
A. Fischer-Colbrie ,
S. Laderman ,
A. Shimazaki ,
A. Waldhauer  and
M. A. Zaitz
S. Brennan
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
P. Pianetta
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
S. Ghosh
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
N. Takaura
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
C. Wiemer
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
A. Fischer-Colbrie
Affiliation:
Hewlett-Packard Co., Palo Alto, CA 94301
S. Laderman
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
A. Shimazaki
Affiliation:
IBM Research Laboratory, Hopewell Junction, NY 12533
A. Waldhauer
Affiliation:
Toshiba Corp., Kawasaki., JAPAN
M. A. Zaitz
Affiliation:
Applied Materials, 350 Bowers Ave., Santa Clara, CA 95051
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Abstract

Synchrotron-based total-reflection x-ray fluorescence(SR-TXRF) has been developed as a leading technique for measuring wafer cleanliness. It holds advantages over other techniques in that it is non-destructive and allows mapping of the surface. The highest sensitivity observed thus far is 3x108 atoms/cm 2 (- 3fg) for 1000 second count time. Several applications of SR-TXRF are presented which take advantage of the energy tunability of the synchrotron source or the mapping capability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 524: Symposium V – Application of Synchrotron Radiation Techniques…IV , 1998 , 245
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Diebold, A.C. and Monahan, K., Solid State Tech. 41, 50 ( 1998)Google Scholar
2. Shimazaki, A., Electrochem. Soc. Syp. Proc. for Defects in Si II, Wash. D.C., May 5-10, 1991; ECS vol. 91–9, 47 (1991)Google Scholar
3. Bertin, P., Principles of X-ray Spectrometric Analysis(Plenum, New York, 1975)Google Scholar
4. Klockenkaimper, R., Total Reflection X-ray Fluorescence Analysis (John Wiley & Sons, New York, 1997)Google Scholar
5. Born, I. and WVolf, E. , Principles of Optics (Pergamon, New York 1975)Google Scholar
6. Brennan, S. , Tompkins, W., Takaura, N., Pianetta, P., Laderman, S.S., Fischer-Colbrie, A. Kortright, J.B., Madden, M.C. and Wherry, D.C., Nucl. Instrum. & Meth. A 347, 417 (1994)Google Scholar
7. Pianetta, P., Takaura, N., Brennan, S., ompkins, WV T., Laderman, S.S., Fischer-Colbrie, A., Shimazaki, A., Miyazaki, K., Madden, M., Wherry, D.C. and Kortright, J.B., Rev. Sci. Instrum. 66, 1293 ( 1995)Google Scholar
8. Fischer-Colbrie, A., Laderman, S.S., Brennan, S., Ghosh, S., Takaura, N., Pianetta, P.. Shimazaki, A., Waldhauer, A., Wherry, D. and Barkan, S., Mat. Res. Soc. Symp. Proc. 477, 403 (1997)Google Scholar
9. See, for instance, Resonant Anomalous X-ray Scattering: Theory and Applications Materlik, G., Sparks, C.J. and Fischer, K., eds., North-Holland (1994).Google Scholar