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Ultrathin Silicon Oxide and Nitride – Silicon Interface States

Published online by Cambridge University Press:  10 February 2011

L.J. Brillson ,
A.P. Young ,
J. Schäfer ,
H. Niimi  and
G. Lucovsky
L.J. Brillson
Affiliation:
Departments of Electrical Engineering, Physics, and Center for Materials Research, The Ohio State University, Columbus, OH 43210-1272, brillson.1@osu.edu
A.P. Young
Affiliation:
Departments of Electrical Engineering, Physics, and Center for Materials Research, The Ohio State University, Columbus, OH 43210-1272
J. Schäfer
Affiliation:
Departments of Electrical Engineering, Physics, and Center for Materials Research, The Ohio State University, Columbus, OH 43210-1272
H. Niimi
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
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Abstract

Local electronic states at nanometer-thick silicon oxide and nitride films on Si can be studied on an unprecedented scale using low - energy cathodoluminescence spectroscopy to observe optical transitions of defect bonding arrangements at ultrathin film interfaces prepared by low -temperature plasma deposition. Our results illustrate significant differences in the dependence of specific defects at the oxide versus nitride interfaces on thermal annealing and hydrogenation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 549
Copyright
Copyright © Materials Research Society 1999

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References

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