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Ultra-Short Pulse Laser Annealing

Published online by Cambridge University Press:  15 February 2011

Kenji Gamo ,
Kouichi Murakami ,
Mitsuo Kawabe ,
Susumu Namba  and
Yoshinobu Aoyagi
Kenji Gamo
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
Kouichi Murakami
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan
Mitsuo Kawabe
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan Institute of Materials Science, University of Tsukuba, Sakura-mura, Ibaraki 305, Japan
Susumu Namba
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan
Yoshinobu Aoyagi
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560, Japan The Institute of Physical and Chemical Research, Wako-shi, Saitama, 351, Japan
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Abstract

A single picosecond pulse laser annealing of ion-implanted Si is reviewed as ultra-short pulse laser annealing, comparing them with nanosecond pulse and picosecond-pulse train annealing. In order to clarify the physical mechanism of pulsed laser annealing, the dynamic behavior of the amorphous to crystalline transition has been investigated by means of time-dependent optical reflectivity measurement at 0.63 µm (cw) and 1.06 µm (30-ps pulse itself) under the irradiation of the annealing beam of a single 30-ps laser pulse at 1.06 µm. A tentative model is proposed for explaining the results and further problems which remain to be resolved are discussed.

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References

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